| PART |
Description |
Maker |
| A63G7332 A63G7332E-42 A63G7332E-45 A63G7332E-5 A63 |
128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 128K的32位同步高的Burst计数器和流水线数据输出高速SRAM
4.2ns 128K x 32bit synchronous high speed SRAM
4.2ns; 128K x 32bit synchronous high speed SRAM with burst counter and pipelined data output
4.5ns 128K x 32bit synchronous high speed SRAM
4.5ns; 128K x 32bit synchronous high speed SRAM with burst counter and pipelined data output
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
| AS7C33128FT32_36B AS7C33128FT36B-80TQIN AS7C33128F |
3.3V 128K x 32/36 Flow Through Synchronous SRAM 3.3 128K的x 32/36流通过同步SRAM
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 6.5 ns, PQFP100
3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 6.5 ns, PQFP100
128K X 32 STANDARD SRAM, 10 ns, PQFP100 14 X 20 MM, TQFP-100
LM3876 Overture™ Audio Power Amplifier Series High-Performance 56W Audio Power Amplifier w/Mute; Package: ISOLATED TO220; No of Pins: 11; Qty per Container: 20; Container: Rail
LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 3000; Container: Reel
LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 1000; Container: Reel
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
Integrated Silicon Solution, Inc.
ALSC[Alliance Semiconductor Corporation]
|
| IS61LF12832-8.5TQI IS61LF12832-7.5TQI IS61LF12832- |
128K x 32, 128K x 36 synchronous flow-through static RAM
128K X 32 CACHE SRAM, 8.5 ns, PQFP100
|
INTEGRATED SILICON SOLUTION INC
|
| IS61SF12832-10TQ IS61SF12832-10TQI IS61SF12832-8.5 |
x36 Fast Synchronous SRAM 128K X 36 CACHE SRAM, 8 ns, PBGA119
x36 Fast Synchronous SRAM 128K X 36 CACHE SRAM, 8.5 ns, PQFP100
Octal D-Type Transparent Latches With 3-State Outputs 20-SO -40 to 85 128K X 32 CACHE SRAM, 8 ns, PQFP100
x36 Fast Synchronous SRAM 128K X 36 CACHE SRAM, 10 ns, PBGA119
128K x 32, 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM 128K X 32 CACHE SRAM, 10 ns, PQFP100
x36 Fast Synchronous SRAM 128K X 36 CACHE SRAM, 12 ns, PQFP100
128K x 32, 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM 128K X 32 CACHE SRAM, 7.5 ns, PQFP100
Octal D-Type Transparent Latches With 3-State Outputs 20-PDIP -40 to 85
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GS72116TP-10 GS72116TP-15 GS72116TP GS72116J-15 GS |
15ns 128K x 16 2Mb asynchronous SRAM
8ns 128K x 16 2Mb asynchronous SRAM
10ns 128K x 16 2Mb asynchronous SRAM
12ns 128K x 16 2Mb asynchronous SRAM
|
GSI[GSI Technology]
|
| M52D32321A-10BG M52D32321A-7.5BG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| CY7C0837AV CY7C0837AV-133BBC CY7C0837AV-133BBI CY7 |
FLEx18垄芒 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
FLEx18 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
FLEx183.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
FLEx18?/a> 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM
|
Cypress Semiconductor Corp.
http://
|
| M52D32321A-7BG M52D32321A09 M52D32321A-10BG |
512K x 32Bit x 2Banks Mobile Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| AS7C33128PFS32A AS7C33128PFS32A-100TQC AS7C33128PF |
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 9 ns, PQFP100
LM4040 Precision Micropower Shunt Voltage Reference; Package: SOT-23; No of Pins: 3; Qty per Container: 3000; Container: Reel 128K X 32 STANDARD SRAM, 8.5 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 36 STANDARD SRAM, 9 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100
LM4040 Precision Micropower Shunt Voltage Reference; Package: SOT-23; No of Pins: 3; Qty per Container: 1000; Container: Reel 128K X 36 STANDARD SRAM, 8.5 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 12 ns, PQFP100
DIODE ZENER SINGLE 1000mW 18Vz 14mA-Izt 0.05 5uA-Ir 13.7Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 18Vz 14mA-Izt 0.05 5uA-Ir 13.7Vr DO41-GLASS 5K/AMMO
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| K4S643233E-SEN |
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
